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    DLA20IM800PC V = VR 800 A2s A2s A2s A2s Symbol Definition Ratings typ. max. IR V IFAV A VF 1.27 RthJC 1K/W min. 20 VRSM V 5 T = 25°CVJ T = °CVJ 150 mA 0.05 V = VR 800 T = 25°CVJ I = AF 20 V T = °CC 140 Ptot 150 W T = 25°CC RthCH K/W max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation Conditions Unit 1.49 T = 25°CVJ VF0 V 0.86 T = °CVJ 175 rF 19 m? V 1.24 T = °CVJ 150 I = AF 20 V 1.59 I = AF 40 I = AF 40 threshold voltage slope resistance for power loss calculation only μA VRRM V 800 max. repetitive reverse blocking voltage T = 25°CVJ CJ 4 junction capacitance V = VR 400 T = 25°Cf = 1 MHz VJ pF IFSM t = 10 ms; (50 Hz), sine T = 45°CVJ max. forward surge current T = °CVJ 150 I2t T = 45°CVJ value for fusing T = °CVJ 150 V = 0 VR V = 0 VR V = 0 VR V = 0 VR t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine T = °CVJ 175 200 215 145 140 A A A A 170 185 200 190 rectangular 0.5d = average forward current thermal resistance junction to case thermal resistance case to heatsink Rectifier 900 0.25 IXYS reserves the right to change limits, conditions and dimensions. 20121026a Data according to IEC 60747and per semiconductor unless otherwise specified ? 2012 IXYS all rights reserved |